Defect control during solid phase epitaxial growth of SiGe alloy layers
نویسندگان
چکیده
منابع مشابه
Vertical SiGe Epitaxial Growth System
OVERVIEW: The increasing sophistication of home electronics and telecommunication devices is propelling the demand for improved semiconductor devices. The SiGe (silicon germanium)-HBT (hetero-junction bipolar transistor) can realize high-speed operation, low noise, and low power consumption, therefore, its expected application to radio frequency IC communication devices is predicted to grow rap...
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A.F. Vyatkin, V.S. Avrutin, N.F. Izyumskaya, V.K. Egorov, V.V. Starkov, V.I. Zinenko, Institute of Microelectronics Technology, RAS, 142432, Moscow distr., Chemogolovka, Russia LA. Smimova, Institute of Solid State Physics, RAS, 142432, Moscow distr.,Chernogolovka, Russia P.L.F. Hemment, A. Nejim, University of Surrey, Guilford, UK V.I. Vdovin, Institute for Chemical Problems of Microelectronic...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 1993
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.109847